Qorvo Pushes X-Band GaN Power Density Beyond 400% in DARPA Program
Qorvo Pushes X-Band GaN Power Density Beyond 400% in DARPA Program Qorvo has achieved more than a 400% increase in X-band GaN transistor RF power density through research funded by DARPA’s THREADS program. Rather than simply increasing transistor output, the project attacks one of high-power RF electronics’ fundamental limitations: heat generated within the transistor itself….