GaN Isn’t Replacing Silicon: ST Is Building AI Power Systems With Si, SiC and GaN STMicroelectronics is developing next-generation AI data-center infrastructure around a combination of silicon, silicon carbide and gallium nitride rather than betting on a single semiconductor technology. Its emerging 800-VDC architecture uses SiC for demanding high-voltage conversion, GaN for compact high-frequency conversion…
Qorvo Pushes X-Band GaN Power Density Beyond 400% in DARPA Program Qorvo has achieved more than a 400% increase in X-band GaN transistor RF power density through research funded by DARPA’s THREADS program. Rather than simply increasing transistor output, the project attacks one of high-power RF electronics’ fundamental limitations: heat generated within the transistor itself….
Navitas Debuts Revolutionary 800 V–6 V Power Delivery Board at NVIDIA GTC 2026 The breakthrough, 800 V–6 VDC-DC power delivery board eliminates traditional 48V intermediate bus converter stage while improving system efficiency, reliability, cost, and compute density. The platform is being showcased at NVIDIA GTC 2026. TORRANCE, CA – March 16th, 2026 — Navitas Semiconductor (Nasdaq:…
