GaN Isn’t Replacing Silicon: ST Is Building AI Power Systems With Si, SiC and GaN

GaN Isn’t Replacing Silicon: ST Is Building AI Power Systems With Si, SiC and GaN STMicroelectronics is developing next-generation AI data-center infrastructure around a combination of silicon, silicon carbide and gallium nitride rather than betting on a single semiconductor technology. Its emerging 800-VDC architecture uses SiC for demanding high-voltage conversion, GaN for compact high-frequency conversion…

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Navitas Unveils 5th Generation SiC Trench-Assisted Planar (TAP) Technology

The latest GeneSiC™ 5th Generation Trench-Assisted Planar (TAP) SiC MOSFET technology delivers significant improvements in performance, reliability, and robustness for AI data centers, grid and energy infrastructure, and industrial electrification. TORRANCE, CA – February 12th, 2026 — Navitas Semiconductor (Nasdaq: NVTS), an industry leader in GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced the…

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