Friday, September 25, 2026
GaN Isn’t Replacing Silicon: ST Is Building AI Power Systems With Si, SiC and GaN
Qorvo Pushes X-Band GaN Power Density Beyond 400% in DARPA Program
Why People Tell AI What They Won’t Tell Humans
Stanford Researchers Cut Computing Heat Waste by More Than 60 Percent
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Simple Technical Vital

GaN Isn’t Replacing Silicon: ST Is Building AI Power Systems With Si, SiC and GaN
Qorvo Pushes X-Band GaN Power Density Beyond 400% in DARPA Program
Why People Tell AI What They Won’t Tell Humans
Stanford Researchers Cut Computing Heat Waste by More Than 60 Percent

Embedded Science

Simple Technical Vital

This Week in the News
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Headlines

GaN Isn’t Replacing Silicon: ST Is Building AI Power Systems With Si, SiC and GaN

Qorvo Pushes X-Band GaN Power Density Beyond 400% in DARPA Program

Why People Tell AI What They Won’t Tell Humans

Stanford Researchers Cut Computing Heat Waste by More Than 60 Percent

Are Chatbots Actually Correct? The Complicated Question of AI Accuracy and AI-Generated Information

Explainable AI (XAI) and the Future of Generative AI

Why Autonomous Vehicles and AGVs Demand Guided Architecture over Black-Box Behaviors

The Artificial Intelligence Basis Foundation: Halting the Descent Toward Runaway Superintelligence

Stanford’s Methane Pyrolysis Breakthrough: What it means for AI

Ambarella Engages Capgemini to Help Accelerate Enterprise Adoption of Edge and Physical AI

September 24, 2026

GaN Isn’t Replacing Silicon: ST Is Building AI Power Systems With Si, SiC and GaN

Sephen Vicinanza013 mins

GaN Isn’t Replacing Silicon: ST Is Building AI Power Systems With Si, SiC and GaN STMicroelectronics is developing next-generation AI data-center infrastructure around a combination of silicon, silicon carbide and gallium nitride rather than betting on a single semiconductor technology. Its emerging 800-VDC architecture uses SiC for demanding high-voltage conversion, GaN for compact high-frequency conversion…

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Qorvo Pushes X-Band GaN Power Density Beyond 400% in DARPA Program

Sephen Vicinanza010 mins

Qorvo Pushes X-Band GaN Power Density Beyond 400% in DARPA Program Qorvo has achieved more than a 400% increase in X-band GaN transistor RF power density through research funded by DARPA’s THREADS program. Rather than simply increasing transistor output, the project attacks one of high-power RF electronics’ fundamental limitations: heat generated within the transistor itself….

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